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Photonic integrated circuits (»Add to Infobox)

Research Leader: Lech Wosinski

Materials and Nanophysics

Integrated photonic devices are key components in future multichannel optical communication networks, and have a wide range of applications in sensor technology. Devices configured in silica glass waveguides and silicon are of particular interest, since they are compatible with silica fibers used in communication and with the corresponding technology used for microelectronics.

The main objective of this long-term research project is to develop new technologies for photonic components in silica/silicon material structure. The broad spectrum of activities spans from optimization of deposition and etching techniques over development of integrated optical devices offering possibilities for mass production to photonic band gap structures that are still in the early stage of development.

Silicon-on-insulator nanowire waveguides appear to be the technology for the next generation of super compact integrated devices. Due to a very high refractive index contrast and strong light confinement in the core, the waveguide bend radius can be reduced to a few micrometers and the size reduction of the functional integrated circuits can reach several orders of magnitude in comparison to standard integrated optics based on silica-on-silicon technology.

Material analysis of deposited films allows better understanding of the UV photosensitivity and refractive index dependence of material doping, strain and other parameters. Evaluation of optical quality, material spectral response and losses is necessary for optimization of technology parameters for fabrication of developed devices.

The goals of this project are:

Investigation and optimization of UV sensitivity of SiO2 and other films.
Optimization of deposition and etching techniques for amorphous silicon and alternating layers of silica and silicon with application to photonic crystal and nanowire devices.
Development of new design concepts and fabrication of passive wavelength-selective devices based on the AWG principle.
Investigation of novel solutions and improvement of parameters for densely integrable silicon-based photonic devices of enhanced functionality.
Development of novel nanophotonic components for waveguiding, polarization conversion, sensing and subwavelength light confinement.

Period: 1997-01-01

Integrated photonic devices, Nanowire waveguides, PECVD technology, Photonic crystal, Planar waveguides, Silica-on-silicon devices, Silicon-on-insulator technology, UV-induced gratings,

Project URL:
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SEM picture of a high quality factor (Q= 3x104 ) cavity formed from a square lattice of silicon pillars (height of 730nm and diameter varying from 232 to 282nm) and wavelength shift depending on the infiltrated material refractive index. This kind of structure is very suitable for sensing applications. (T. Xu, N. Zhu, M. Xu, H. Ruda and L. Wosinski, Appl. Phys. Lett 2009)

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Sketch, simulation and SEM picture of a compact low loss coupler between strip and slot waveguides. (Z. Wang, N. Zhu, Y. Tang, L. Wosinski, D. Dai and S. He, Optics Letters, Vol. 34 Issue 10, 2009)

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An optical triplexer that can transmit and recive 1310nm upload data, 1490nm download data and 1550nm download video signal for fiber-to-the-home applications realized using Cross-Order Echelle Grating. (N. Zhu, J. Song, L. Wosinski, S. He and L. Thylen, Optics Letters, Vol. 34, Issue 3, 2009)


SSF (Swedish Foundation for Strategic Research)

VR (The Swedish Research Council)


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